On the small-signal equivalent circuit of p-n junctions in the condition of finite carriers multiplication
- 29 February 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (2) , 133-138
- https://doi.org/10.1016/0038-1101(80)90149-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Low-frequency multiplication noise in reference diodes for small multiplication factorsElectronics Letters, 1977
- Effects of time dependence of multiplication process on avalanche noiseSolid-State Electronics, 1973
- Low-frequency white noise in reference diodesSolid-State Electronics, 1972
- Noise in IMPATT diodes: Intrinsic propertiesIEEE Transactions on Electron Devices, 1972
- Quasistatic Approximation for Semiconductor AvalanchesJournal of Applied Physics, 1970
- A small-signal theory of avalanche noise in IMPATT diodesIEEE Transactions on Electron Devices, 1967
- Small-signal impedance of avalanching junctions with unequal electron and hole ionization rates and drift velocitiesIEEE Transactions on Electron Devices, 1967
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966
- Electronic tuning effects in the read microwave avalanche diodeIEEE Transactions on Electron Devices, 1966
- Negative resistance in p-n junctions under avalanche breakdown conditions, part IIIEEE Transactions on Electron Devices, 1966