Spatially resolved cathodoluminescence of semiconductors
- 1 April 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 185 (1-4) , 319-324
- https://doi.org/10.1016/0921-4526(93)90254-4
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substratesJournal of Crystal Growth, 1992
- Exciton complexes in ZnSe layers: a tool for probing the strain distributionJournal of Crystal Growth, 1992
- Polarized excitation luminescence of semiconductor quantum wellsApplied Physics Letters, 1992
- Temperature dependence of semiconductor band gapsApplied Physics Letters, 1991
- Electron beam excitation of II–VI compound strained layer superlatticesJournal of Luminescence, 1991
- Photoreflectance study of gallium arsenide grown on SiApplied Physics Letters, 1990
- Strain-induced splitting of free exciton band in epitaxially grown ZnSe on GaAsJournal of Crystal Growth, 1990
- Excitonic transitions in ZnSe epilayers grown on GaAsPhysical Review B, 1988
- Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAsJournal of Crystal Growth, 1987