On the Martensitic Transformation in V3Si
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We demonstrate unambiguously that V5Si3 inclusions coherent with the V3Si matrix induce at low temperature a tetragonal distorsion of V3Si.a) Polycrystalline samples are transforming only if they are two phased V3Si - V5Si3,b) the oriented eutectic V3Si - V5Si3 undergoes a cubic - tetragonal distortion under 60K.c) A transforming V3Si crystal is obtained by solid state epitaxy of a V5Si3 layer on the (001) plane.These experiments support very well our idea that the distorsion can be driven by internal stresses in the samples, related to silicon over stoichiometry.Keywords
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