Nonlinear optical absorption in bulk GaInAs/InP at room temperature
- 16 February 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (7) , 398-400
- https://doi.org/10.1063/1.98211
Abstract
We report cw measurements of band-gap resonant nonlinear absorption in bulk Ga0.47In0.53As/InP at room temperature. A tunable Co:MgF2 laser was used for these experiments. The nonlinear absorption coefficient α2 is determined by measuring saturation of the optical absorption, and from this the nonlinear refractive index n2 is calculated in the band-tail region. We find α2≊−6 cm W−1 at 1.67 μm and n2≊−4×10−5 cm2 W−1 at 1.69 μm. Within the band-tail region the nonlinear optical quality factor ‖n2/α‖ is found to lie between 0.9 and 1.8×10−8 cm3 W−1.Keywords
This publication has 16 references indexed in Scilit:
- Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structuresApplied Physics Letters, 1986
- Efficient cw performance of a Co:MgF2 laser operating at 1.5–2.0 μmOptics Communications, 1986
- Picosecond study of near-band-gap nonlinearities in GaInAsPJournal of Applied Physics, 1986
- Picosecond nonlinear absorption and four-wave mixing in GaInAsPApplied Physics Letters, 1985
- Numerical evaluation of optical pump-probe experimentsJournal of Applied Physics, 1985
- Picosecond measurement of Auger recombination rates in InGaAsApplied Physics Letters, 1984
- Picosecond absorption saturation in GaInAsPElectronics Letters, 1984
- Nonlinear carrier dynamics in GaxIn1−xAsyP1−y compoundsApplied Physics Letters, 1984
- Photoexcited carrier lifetime and Auger recombination in 1.3-μm InGaAsPApplied Physics Letters, 1983
- Saturation and recovery of the direct interband absorption in semiconductorsJournal of Applied Physics, 1975