Valley mixing in resonant tunnelling diodes with applied hydrostatic pressure
- 1 December 1995
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 10 (12) , 1673-1679
- https://doi.org/10.1088/0268-1242/10/12/018
Abstract
In this article we present a theoretical investigation of the tunnelling current in resonant tunnelling diodes based on a realistic tight-binding approach. The hydrostatic pressure dependence of the tunnelling current is calculated and compared with available experimental results. An important contribution from the X valley of the barrier region is demonstrated, which becomes especially significant at high pressures. The level crossing between X and Gamma localized states is shown to modify the peak value of the tunnelling current.Keywords
This publication has 38 references indexed in Scilit:
- Hydrostatic pressure sensors based on solid state tunneling devicesSolid-State Electronics, 1994
- Valley mixing in GaAs/AlAs multilayer structures in the effective-mass methodPhysical Review B, 1993
- Valley mixing in short-period superlattices and the interface matrixPhysical Review B, 1993
- Γ-Xinterference effects on quasi-bound-state lifetimes in GaAs/AlAs double-barrier heterostructuresPhysical Review B, 1993
- Tight-binding model for GaAs/AlAs resonant-tunneling diodesPhysical Review B, 1991
- Connection of envelope functions at semiconductor heterointerfaces. II. Mixings of Γ and X valleys in GaAs/AsPhysical Review B, 1989
- Connection of envelope functions at semiconductor heterointerfaces. I. Interface matrix calculated in simplest modelsPhysical Review B, 1989
- Γ- and X-state influences on resonant tunneling current in single- and double-barrier GaAs/AlAs structuresApplied Physics Letters, 1989
- Indirect gap resonant tunneling in GaAs/AlAsSolid State Communications, 1987
- Tunneling through indirect-gap semiconductor barriersPhysical Review B, 1986