Photoluminescence killer center in AlGaAs grown by molecular-beam epitaxy

Publisher Website
Google Scholar
Abstract
Origin of a nonradiative center in AlGaAs grown by molecular‐beam epitaxy was investigated by secondary ion mass spectroscopy and deep‐level transient spectroscopy, from the change of photoluminescence intensity with anneal treatment, and from its comparison with GaAs. Aluminum‐oxygen complex is a most probable defect which acts as a nonradiative center in AlGaAs, and the oxygen would evaporate as Al2O from the surface, which would be a reason why the photoluminescence intensity increases under higher substrate temperature and lower V/III flux ratio. The electron‐trap level at 0.76 eV from the conduction band would be the recombination center, and the photoluminescence intensity is inversely proportional to the trap concentration.