Hydrogenation of gold-related levels in silicon by electrolytic doping
- 15 February 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (4) , 1221-1223
- https://doi.org/10.1063/1.333167
Abstract
The deep gold-related donor and acceptor levels in silicon have been neutralized to several μm depth by introducing atomic hydrogen using an electrolytic method. Using phosphoric or sulfuric acid as the electrolyte, it is possible to dope the crystalline silicon with hydrogen at elevated temperatures (200–280 °C) allowing direct comparison with other means of introduction, such as hydrogen plasma exposure. We find the electrolytic method is not as efficient as plasma treatment for the same conditions, possibly due to oxide formation during the immersion in the acid.This publication has 17 references indexed in Scilit:
- Hydrogen passivation of gold-related deep levels in siliconPhysical Review B, 1982
- Models for the Hydrogen-Related Defect—Impurity Complexes and Si-H Infrared Bands in Crystalline SiliconPhysica Status Solidi (a), 1982
- HYDROGEN PASSIVATION OF POLYCRYSTALLINE SILICON PHOTOVOLTAIC CELLSLe Journal de Physique Colloques, 1982
- Deuterium passivation of grain-boundary dangling bonds in silicon thin filmsApplied Physics Letters, 1982
- Hydrogen passivation of defects in deformed siliconPhysica Status Solidi (a), 1981
- Electrolytical method for hydrogenation of siliconPhysics Letters A, 1981
- Complex nature of gold-related deep levels in siliconPhysical Review B, 1980
- Hydrogen passivation of point defects in siliconApplied Physics Letters, 1980
- Semi-empirical calculations of hydrogen defects in siliconPhysics Letters A, 1978
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974