Hydrogen passivation of defects in deformed silicon
- 16 September 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 67 (1) , K75-K80
- https://doi.org/10.1002/pssa.2210670152
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Studies of the hydrogen passivation of silicon grain boundariesJournal of Applied Physics, 1981
- On the DLTS‐characterization of dislocation states in siliconCrystal Research and Technology, 1981
- Hydrogen passivation of point defects in siliconApplied Physics Letters, 1980
- Post-hydrogenation of CVD deposited a-Si filmsJournal of Non-Crystalline Solids, 1980
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979
- Defect states associated with dislocations in siliconApplied Physics Letters, 1979