Effect of a perturbed acoustic-phonon distribution on hot-electron transport: A Monte Carlo analysis
- 15 February 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (4) , 1460-1468
- https://doi.org/10.1063/1.338077
Abstract
A Monte Carlo simulation code has been developed to study the effect of phonon perturbations in hot-electron transport in semiconductors. The modifications of carrier drift velocity and mean energy induced by the perturbed acoustic-phonon distribution are studied at low temperatures in p-Ge. Under appropriate conditions, current saturation is obtained as a result of the steady-state phonon perturbation. The Monte Carlo analysis has been complemented and compared with an analytical approach based on a heated and displaced Maxwellian distribution for the electron gas.This publication has 9 references indexed in Scilit:
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