An evaluation of energy transport models for silicon device simulation

This publication has 18 references indexed in Scilit:

• Substrate current model for submicrometer MOSFETs based on mean free path analysis
  IEEE Transactions on Electron Devices, 1989
• Electron energy distribution for calculation of gate leakage current in MOSFETs
  Solid-State Electronics, 1988
• The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors
  IEEE Transactions on Electron Devices, 1988
• A new discretization strategy of the semiconductor equations comprising momentum and energy balance
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
• Nonstationary carrier dynamics in quarter-micron Si MOSFETs
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
• Efficient and accurate use of the energy transport method in device simulation
  IEEE Transactions on Electron Devices, 1988
• MOSFET substrate current model including energy transport
  IEEE Electron Device Letters, 1987
• Two-dimensional analysis of velocity overshoot effects in ultrashort-channel Si MOSFET's
  IEEE Transactions on Electron Devices, 1985
• Numerical simulation of hot-carrier transport in silicon bipolar transistors
  IEEE Transactions on Electron Devices, 1983
• Transport equations for electrons in two-valley semiconductors
  IEEE Transactions on Electron Devices, 1970