Picosecond dynamics of optical gain switching in vertical cavity emitting lasers
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (6) , 1417-1425
- https://doi.org/10.1109/3.89959
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Generation of picosecond pulses with a gain-switched GaAs surface-emitting laserApplied Physics Letters, 1990
- Design of 13-μm GaInAsP surface-emitting lasers for high-bandwidth operationOptics Letters, 1990
- Surface-emitting microlasers for photonic switching and interchip connectionsOptical Engineering, 1990
- Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodesElectronics Letters, 1989
- Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold currentIEEE Journal of Quantum Electronics, 1989
- Design of Fabry-Perot surface-emitting lasers with a periodic gain structureIEEE Journal of Quantum Electronics, 1989
- Gain switching of semiconductor injection lasersApplied Physics Letters, 1988
- Picosecond pulse generation (<1.8 ps) in a quantum well laser by a gain switching methodApplied Physics Letters, 1987
- Picosecond dynamics of a gain-switched InGaAsP laserIEEE Journal of Quantum Electronics, 1987
- A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasersIEEE Journal of Quantum Electronics, 1976