Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (6) , 1161-1170
- https://doi.org/10.1109/3.29242
Abstract
No abstract availableThis publication has 44 references indexed in Scilit:
- Heterojunctions: Some knowns and unknownsSolid-State Electronics, 1987
- Effect of conduction-band nonparabolicity on quantized energy levels of a quantum wellApplied Physics Letters, 1986
- Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy compositionJournal of Applied Physics, 1986
- Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasersIEEE Journal of Quantum Electronics, 1985
- Lifetime broadening of a parabolic band edge of a pure semiconductor at various temperaturesSolid-State Electronics, 1985
- Determination of the conduction-band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance-voltage measurementsApplied Physics Letters, 1985
- Modification of optical properties of GaAs-Ga1−xAlxAs superlattices due to band mixingApplied Physics Letters, 1983
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- On the low energy tail of the electron-hole drop recombination spectrumSolid State Communications, 1977
- Electron Interaction Effects on Recombination SpectraPhysica Status Solidi (b), 1966