Organometallic chemical vapor deposition of strontium titanate
- 15 April 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (8) , 3858-3861
- https://doi.org/10.1063/1.345034
Abstract
SrTiO3 thin films were deposited by low‐pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate)2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600–850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.This publication has 7 references indexed in Scilit:
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