Epitaxial garnet films by organometallic chemical vapor deposition
- 1 August 1974
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 3 (3) , 621-633
- https://doi.org/10.1007/bf02655290
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The vapour pressures of several metal-2,2,6,6-tetramethyl-3,5-heptanedione complexes measured by a Knudsen effusion methodJournal of Thermal Analysis and Calorimetry, 1973
- Control of product phases in the chemical vapor deposition of garnet filmsMaterials Research Bulletin, 1972
- Rare earth-yttrium iron-gallium garnet epitaxial films for magnetic bubble domain applicationsMaterials Research Bulletin, 1971
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Gallium Diethyl Chloride: A New Substance in the Preparation of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1970
- Magnetic oxide filmsIEEE Transactions on Magnetics, 1969
- Volatile lanthanide chelates. II. Vapor pressures, heats of vaporization, and heats of sublimationJournal of the American Chemical Society, 1969
- Epitaxial Gallium Arsenide from Trimethyl Gallium and ArsineJournal of the Electrochemical Society, 1969
- The preparation of thin films of some oxides by the pyrolysis methodThin Solid Films, 1968
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968