Silicon dioxide thin films prepared by chemical vapor deposition from tetrakis (dimethylamino)silane and ozone
- 2 August 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (5) , 611-613
- https://doi.org/10.1063/1.109965
Abstract
Silicon dioxide thin films were prepared by a low-temperature atmospheric-pressure chemical vapor deposition method. The raw materials were tetrakis(dimethylamino)silane and ozone in oxygen gas. At a substrate temperature above 40 °C, the thin films were obtained with a high deposition rate.Keywords
This publication has 1 reference indexed in Scilit:
- Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Silicon TetraacetateJapanese Journal of Applied Physics, 1989