Tantalum nitride as a diffusion barrier between Pd2Si or CoSi2 and aluminum
- 15 April 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (8) , 3017-3022
- https://doi.org/10.1063/1.342693
Abstract
Reactively sputtered tantalum nitride (Ta2N) has been investigated as a diffusion barrier between Pd2Si and aluminum and CoSi2 and Al. Ta2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 °C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n‐Si/Pd2Si/Ta2N/Al were excellent and showed no deterioration after annealing at 500 °C. However, similar devices with CoSi2 contacts and Ta2N barrier showed a creation of high contact resistance between the silicide and the as‐deposited nitride.This publication has 2 references indexed in Scilit:
- Chemical bonding and Schottky barrier formation at transition metal–silicon interfacesJournal of Vacuum Science & Technology A, 1983
- Aluminum-silicide reactions. II. Schottky-barrier heightJournal of Applied Physics, 1979