Electrochemical study of atomically flattening process of silicon surface in 40% NH4F solution
- 1 June 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 130-132, 146-150
- https://doi.org/10.1016/s0169-4332(98)00041-5
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 19 references indexed in Scilit:
- Analysis of Silicon Surface in Connection with Its Unique Electrochemical and Etching BehaviorJournal of the Electrochemical Society, 1997
- Atomic‐Scale Elucidation of the Anisotropic Etching of (110) n‐Si in Aqueous NH 4 F : Studies by In Situ Scanning Tunneling MicroscopyJournal of the Electrochemical Society, 1996
- Enhanced Etching Rate of Silicon in Fluoride Containing Solutions at pH 6.4Journal of the Electrochemical Society, 1996
- Etching mechanism and atomic structure of H-Si(111) surfaces prepared in NH4FElectrochimica Acta, 1995
- Electrochemical etching of Si(001) in NH4F solutions: Initial stage and {111} microfacet formationApplied Physics Letters, 1995
- Etching of Silicon in NaOH Solutions: I . In Situ Scanning Tunneling Microscopic Investigation of n‐Si(111)Journal of the Electrochemical Society, 1993
- Atomic scale analyses of HF-treated Si(111) surfaces by STMApplied Surface Science, 1992
- Two-stage carcinogenesis in the planarianPublished by Springer Nature ,1991
- Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivationPhysical Review Letters, 1990
- Hydrogen Vibration on Si(111) 7 × 7: Evidence for a Unique Chemisorption SitePhysical Review Letters, 1983