Resonant Raman scattering in mixedGaAs1xPxcrystals

Abstract
Dual aspects of resonant Raman scattering in mixed GaAs1x Px crystals due to band-to-band transitions at the direct energy gap as well as the effect of electron localization due to alloying and disorder are presented. Also described are resonance effects of the zone-edge phonons due to scattering at the indirect gap in the mixed crystals.
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