Complete microcrystalline p-i-n solar cell—Crystalline or amorphous cell behavior?

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Abstract
Complete μc‐Si:H p‐i‐n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic μc‐Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm2 due to an enhanced absorption in the near‐infrared could be obtained. First light‐soaking experiments indicate no degradation for the entirely μc‐Si:H cells. Voltage‐dependent spectral response measurements suggest that the carrier transport in complete μc‐Si:H p‐i‐n cells may possibly be cosupported by diffusion (in addition to drift).