The effect of the shift of the absorption edge by electrical field in the degenerate semiconductors
- 28 July 1969
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 29 (9) , 490-491
- https://doi.org/10.1016/0375-9601(69)90391-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Behaviour of the High-Field Domains below the Voltage of the Nucleation ThresholdPhysica Status Solidi (b), 1968
- Gunn Domain DynamicsJournal of Applied Physics, 1966
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Absorption edge in degenerate n-type gallium arsenideJournal of Physics and Chemistry of Solids, 1963
- Optical Absorption Edge in GaAs and Its Dependence on Electric FieldJournal of Applied Physics, 1961
- Infrared Absorption of Indium AntimonidePhysical Review B, 1955
- Anomalous Optical Behavior of InSb and InAsPhysical Review B, 1954
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954