Hydrogen in Silicon
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type Si. Also mentioned are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors, and hyper-deep defects.Keywords
This publication has 44 references indexed in Scilit:
- Field-enhanced neutralization of electrically active boron in hydrogen implanted Schottky diodesApplied Physics A, 1986
- Assali and Leite respondPhysical Review Letters, 1986
- Electric field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal siliconApplied Physics Letters, 1985
- Microscopic Mechanism of Hydrogen Passivation of Acceptor Shallow Levels in SiliconPhysical Review Letters, 1985
- Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated siliconApplied Physics Letters, 1985
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Deactivation of group III acceptors in silicon during keV electron irradiationApplied Physics Letters, 1983
- Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized siliconJournal of Applied Physics, 1983
- Deactivation of the boron acceptor in silicon by hydrogenApplied Physics Letters, 1983
- Deuterium passivation of grain-boundary dangling bonds in silicon thin filmsApplied Physics Letters, 1982