Raman study of GaAs-InxAl1−x As strained-layer superlattices
- 1 December 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (11) , 4342-4345
- https://doi.org/10.1063/1.335522
Abstract
Raman spectroscopy has been used to study the lattice‐mismatch strains in GaAs‐InxAl1−xAs strained‐layer superlattices grown by molecular beam epitaxy with the layer thicknesses of 10–200 Å and In content x of 0.11, 0.20, and 0.35. The strain‐induced shifts of the longitudinal optic phonon modes indicate that the GaAs and InxAl1−xAs layers have the tensile and compressive strains, respectively, along the interfaces. The strain calculated from the observed frequency shift agrees with the lattice‐mismatch strain given by the elastic theory.This publication has 9 references indexed in Scilit:
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