Cascode connected AlGaN/GaN HEMTs on SiC substrates

This publication has 7 references indexed in Scilit:

• High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
  IEEE Electron Device Letters, 2000
• AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
  Applied Physics Letters, 1999
• 1 - 8-GHz GaN-based power amplifier using flip-chip bonding
  IEEE Microwave and Guided Wave Letters, 1999
• AlGaN/GaN dual-gate modulation-doped field-effecttransistors
  Electronics Letters, 1999
• Coplanar millimeter-wave ICs for W-band applications using 0.15 μm pseudomorphic MODFETs
  IEEE Journal of Solid-State Circuits, 1996
• Monolithic Dual-Gate GaAs FET Digital Phase Shifter
  IEEE Transactions on Microwave Theory and Techniques, 1982