Deep-center photoluminescence in undoped semi-insulating GaAs: 0.68 eV band due to the main deep donor
- 30 September 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 43 (12) , 953-956
- https://doi.org/10.1016/0038-1098(82)90937-1
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPRSolid State Communications, 1981
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980
- A model for the ∼ 1.10eV emission band in InPSolid State Communications, 1980
- Effect of oxygen in photoluminescence from chromium-doped semi-insulating GaAsSolid State Communications, 1979
- Extrinsic photoconductivity in high-resistivity GaAs doped with oxygenApplied Physics Letters, 1977
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Temperature dependence of ionization energies of deep bound states in semiconductorsJournal de Physique Lettres, 1977
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975