A TEM investigation of the initial stages of InSb growth on GaAs (001) by molecular beam epitaxy
- 1 December 1990
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 7 (3) , 203-208
- https://doi.org/10.1016/0921-5107(90)90027-9
Abstract
No abstract availableKeywords
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