Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy
- 26 September 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (13) , 1189-1191
- https://doi.org/10.1063/1.100405
Abstract
Molecular beam epitaxy has been used to grow thin (0.5 μm<tp type and comparable with homoepitaxial material.Keywords
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