Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy
- 2 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (18) , 1431-1432
- https://doi.org/10.1063/1.98647
Abstract
We prepared InAs0.02Sb0.98 on semi‐insulating GaAs substrates with molecular beam epitaxy and measured the temperature dependence of the band gap. Photoconducting detectors were measured and found to have high internal quantum efficiency (47%) and high speed (10 ns).Keywords
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