The preparation of transmission electron microscope specimens from compound semiconductors by ion milling

This publication has 15 references indexed in Scilit:

• Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/Al_xGa_1-x As Multilayer Structure
  Japanese Journal of Applied Physics, 1985
• Formation and elimination of surface ion milling defects in cadmium telluride, zinc sulphide and zinc selenide
  Ultramicroscopy, 1985
• Iodine ion milling of indium-containing compound semiconductors
  Applied Physics Letters, 1984
• Dynamic observation of defect annealing in CdTe at lattice resolution
  Nature, 1982
• A study of the structure and properties of epitaxial silver deposited by atomic beam techniques on (001) InP
  Thin Solid Films, 1979
• Cross-sectional specimens for transmission electron microscopy
  Journal of Applied Physics, 1974
• Method of preparing Si and Ge specimens for examination by transmission electron microscopy
  British Journal of Applied Physics, 1962
• Sample Preparation for Transmission Electron Microscopy of Germanium
  Review of Scientific Instruments, 1961
• The preparation of thin films of germanium and silicon
  British Journal of Applied Physics, 1961
• Examen direct des métaux par transmission en microscopie et diffraction électroniques
  Revue de Métallurgie, 1955