Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/AlxGa1-x As Multilayer Structure
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12A) , L905-907
- https://doi.org/10.1143/jjap.24.l905
Abstract
A new method is presented for the composition analysis of GaAs/Al x Ga1-x As multilayer structure using transmission electron microscopy. It is found that the position of equal thickness fringe observed at the edge of a cleaved chip is closely related to the composition. Change in Al composition in GaAs/Al x Ga1-x As superstructure is observed as a shift of the equal thickness fringe. Compositional abruptness at the heterointerface and compositional fluctuation in the thin layer can be estimated in the electron microscope image.Keywords
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