P‐29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States

Abstract
We report a model of the carrier transport and the subgap density of states in a representative amorphous oxide semiconductor, amorphous InGaZnO4 (a‐IGZO), for device simulation of a‐IGZO TFTs. Compared to hydrogenated amorphous silicon, a‐IGZO exhibits much lower densities of tail states and deep gap states, leading to the small subthreshold swings and high mobilities.