Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs
Open Access
- 2 November 2006
- journal article
- research article
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 1 (1) , R34-R36
- https://doi.org/10.1002/pssr.200600049
Abstract
In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors.Keywords
This publication has 13 references indexed in Scilit:
- Electrical and optical properties of amorphous indium zinc oxide filmsThin Solid Films, 2006
- Transport in high mobility amorphous wide band gap indium zinc oxide filmsPhysica Status Solidi (a), 2005
- Fully Transparent ZnO Thin‐Film Transistor Produced at Room TemperatureAdvanced Materials, 2005
- High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layerApplied Physics Letters, 2004
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- Transparent oxide optoelectronicsMaterials Today, 2004
- Quick-set thin filmsNature, 2004
- Pentacene thin film transistors fabricated on plastic substratesSynthetic Metals, 2003
- Highly electrically conductive indium–tin–oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser depositionApplied Physics Letters, 2000
- Highly transparent and conductive ZnOIn2O3 thin films prepared by d.c. magnetron sputteringThin Solid Films, 1996