Transport in high mobility amorphous wide band gap indium zinc oxide films
- 10 June 2005
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 202 (9) , R95-R97
- https://doi.org/10.1002/pssa.200521020
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Fully Transparent ZnO Thin‐Film Transistor Produced at Room TemperatureAdvanced Materials, 2005
- Transparent oxide optoelectronicsMaterials Today, 2004
- P‐type doping and devices based on ZnOPhysica Status Solidi (b), 2004
- A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction DiodesAdvanced Materials, 2003
- Transparent ElectronicsScience, 2003
- Electrical and Optical Properties of In2O3–ZnO Films Deposited on Polyethylene Terephthalate Substrates by Radio Frequency Magnetron SputteringJapanese Journal of Applied Physics, 2003
- Systematic study and performance optimization of transparent conducting indium–zinc oxides thin filmsElectrochimica Acta, 2001
- The role of dislocation scattering in n-type GaN filmsApplied Physics Letters, 1998
- Parameterization of the optical functions of amorphous materials in the interband regionApplied Physics Letters, 1996
- Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examplesJournal of Non-Crystalline Solids, 1996