Room temperature operation of Si single-electron memory with self-aligned floating dot gate

31 March 1997

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 70 (13) , 1742-1744
https://doi.org/10.1063/1.118653

Abstract

We have developed an excellent fabrication method for a Si single-electron field effect transistor memory device having a self-aligned floating dot gate. This device demonstrates single electron memory operation at room temperature. The ability to precisely control the size and position of the floating dot gate and the channel indicates the feasibility of practical single-electron memory.

Keywords

SILICON
ELEMENTAL SEMICONDUCTORS
SINGLE ELECTRON TRANSISTORS
SEMICONDUCTOR QUANTUM DOTS
QUANTUM INTERFERENCE DEVICES
SIMOX
SEMICONDUCTOR STORAGE
FIELD EFFECT TRANSISTORS

This publication has 2 references indexed in Scilit:

Isolated Nanometer-Size Si Dot Arrays Fabricated Using Electron-Beam Lithography, Reactive Ion Etching, and Wet Etching in NH₄OH/H₂O₂/H₂O
Japanese Journal of Applied Physics, 1994
Room-temperature single-electron memory
IEEE Transactions on Electron Devices, 1994