Doping dependence of second breakdown in a p-n junction
- 31 August 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (8) , 747-751
- https://doi.org/10.1016/0038-1101(71)90153-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse VoltagesIEEE Transactions on Nuclear Science, 1968
- Input power induced thermal effects related to transition time between avalanche and second breakdown in p-n silicon junctionsIEEE Transactions on Electron Devices, 1966
- "Second breakdown" in transistorsIRE Transactions on Electron Devices, 1962
- Drift and Conductivity Mobility in SiliconPhysical Review B, 1956