Radiation Hardened P-Surface Channel CCD's
- 1 December 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 23 (6) , 1639-1643
- https://doi.org/10.1109/tns.1976.4328555
Abstract
A process for total dose hardening of surface p-channel CCD's with overlapping polysilicon gates has been developed by optimizing the process steps associated with the gate oxides and polysilicon gates. 16-bit shift registers fabricated with this process can be operated up to 1×106 rads (Si) with threshold voltage shifts of ≤ 2V for the buried gates, and ≤ 1.5V for the surface gates on the best devices fabricated. The charge transfer efficiency for the devices with -10V gate bias during irradiation is unchanged after 1×106 rads (Si), but drops to 0.999 for the devices with OV gate bias during irradiation. The average dark current increases to only 1.75 times the initial value after 1×106 rads (Si) for devices with -10V gate bias during irradiation, and to 4 times the initial value for the devices with OV gate bias. No additional dark current spikes are observed up to 1×106 rads (Si). These results represent a very large improvement in hardness over typical CCD's.Keywords
This publication has 3 references indexed in Scilit:
- Effects of Ionizing Radiation on a 256-Stage Linear CCD ImagerIEEE Transactions on Nuclear Science, 1975
- Design Optimization of Radiation-Hardened CMOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1975
- Effects of gamma radiation on charge-coupled devicesApplied Physics Letters, 1973