Abstract
A three-dimensional finite-element scheme is used to calculate the electronic structure of H2+ in magnetic fields of arbitrary directions. The result is used to obtain the magnetoabsorption spectrum of ionized donor molecules D2+ in high-purity n-type semiconductors in the effective-mass approximation. The absorption peak energy as a function of the magnetic field, expressed in nondimensional units, is found to be universal, i.e., independent of the effective mass, donor concentration, compensation, etc. The calculation provides a clear characteristic feature of D2+. Also, the usefulness and versatility of the finite-element method in electronic-structure calculations are demonstrated.

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