Divacancy annealing in Si: Influence of hydrogen

We have performed comparative studies of divacancy $\left({\mathrm{V}}_2\right)$ annealing in hydrogenated and nonhydrogenated Si by deep level transient spectroscopy. It is shown that the nonhydrogenated samples demonstrate the formation of divacancy-oxygen $\left({\mathrm{V}}_2\mathrm{O}\right)$ complex during annealing of ${\mathrm{V}}_2,$ while the hydrogenated samples demonstrate annealing of ${\mathrm{V}}_2$ without correlated growth of electrically active centers. No substantial formation of divacancy-hydrogen $\left({\mathrm{V}}_2\mathrm{H}\right)$ complexes is observed in the hydrogenated samples. It is suggested that the dominant mechanism of ${\mathrm{V}}_2$ annealing in hydrogen-rich Si is the interaction with hydrogen molecules $\left({\mathrm{H}}_2\right)$ that results in the formation of the ${\mathrm{V}}_2{\mathrm{H}}_2$ complex.