Annealing kinetics and reversibility of stress-induced leakage current in thin oxides
- 8 June 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (23) , 3041-3043
- https://doi.org/10.1063/1.121534
Abstract
The annealing kinetics of stress-induced leakage current in ultrathin SiO2 has been quantitatively investigated after high temperature bakes. We have found that the defects at the origin of the stress induced-leakage current can be fully annihilated and that it is possible to generate and anneal them several times without deterioration of the oxide quality. Moreover, the activation energy and diffusion coefficient deduced from the recovery time constant of the annealing kinetics are found nearly independent of the oxide thickness.Keywords
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