Cellular structure and silicide formation in laser-irradiated metal-silicon systems
- 1 August 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (3) , 273-275
- https://doi.org/10.1063/1.91105
Abstract
Laser irradiation of thin Co, Mo, and Pd films on single‐crystalline silicon using Q‐switched Nd‐YAG laser pulses was shown by He backscattering to result in deep metal penetration into the Si. Evidence of the silicide formation was obtained by x‐ray diffraction. Transmission electron microscopy showed the simultaneous occurrence of two types of cells with metal‐rich walls: small cells of about 0.1‐μm diameter, attributed to rapid solidification from a supercooled melt, and larger cells of about 1‐μm diameter, attributed to convection in the melt (Bénard cells).Keywords
This publication has 9 references indexed in Scilit:
- Substrate and doping effects upon laser-induced epitaxy of amorphous siliconJournal of Applied Physics, 1979
- Dynamics of laser-induced formation of palladium silicideApplied Physics Letters, 1979
- Laser-induced reactions of platinum and other metal films with siliconApplied Physics Letters, 1978
- Epitaxial laser crystallization of thin-film amorphous siliconApplied Physics Letters, 1978
- Silicon epitaxy by pulsed laser annealing of evaporated amorphous filmsPhysics Letters A, 1978
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Amorphous thickness dependence in the transition to single crystal induced by laser pulsePhysics Letters A, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978
- Some features of laser annealing of implanted silicon layersRadiation Effects, 1978