Dopant Segregation at Polycrystalline Silicon Grain Boundaries in Device Fabrication Processes
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Electrical and microstructural investigation of polysilicon emitter contacts for high-performance bipolar VLSIIBM Journal of Research and Development, 1987
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- Segregation of Arsenic to the Grain Boundaries in Polycrystalline SiliconJournal of the Electrochemical Society, 1980
- Chemical Vapor Deposited Polycrystalline SiliconJournal of the Electrochemical Society, 1972