Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures

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Abstract
Deep electron-trapping centers present in InAlAs (barrier layers) are found to have significant effects on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures grown by molecular-beam epitaxy. When the energy depths of these centers are less than the discontinuity of the conduction band for this heterojunction, they come to be ionized to produce two-dimensional electron gas in the quantum well (InGaAs). The excess electrons thus accumulated dissociate the excitons by screening the attractive potential between electrons and holes. Hence, the deep levels in barrier layers must be reduced in order to improve the optoelectronic quality of this class of multiquantum-well structures.