Metastable state of the 0.68-eV emission in undoped semi-insulating GaAs

15 June 1985

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 31 (12) , 8259-8262
https://doi.org/10.1103/physrevb.31.8259

Abstract

The persistent photoluminescence quenching effect of the 0.68-eV emission present in undoped semi-insulating GaAs has been studied in the temperature range 4–300 K. The temperature dependence of the spectral distribution for the quenching of the 0.68-eV emission and the thermal regeneration rate of the 0.68-eV emission from the metastable state to the normal state have been determined. The data are in agreement with the assignment of the 0.68-eV emission as a transition associated with the main deep donor EL2 center.

Keywords

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