Gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures
- 24 June 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (25) , 2954-2956
- https://doi.org/10.1063/1.104733
Abstract
InAsxP1−x/InP strained multiple quantum wells with strain as high as 2.5% were grown by gas‐source molecular beam epitaxy. Successful control of the arsenic composition over a wide range was achieved by two different growth techniques. Structural and optical studies, such as high‐resolution x‐ray rocking curve, cross‐sectional transmission electron microscopy, photoluminescence, and absorption measurement, indicate that we have obtained high quality multiple quantum wells that are suitable for optoelectronic applications.Keywords
This publication has 8 references indexed in Scilit:
- Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxyApplied Physics Letters, 1991
- Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxyApplied Physics Letters, 1990
- Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxyJournal of Crystal Growth, 1990
- Structural and Optical Properties of Highly Strained InAs x P 1 − x / InP HeterostructuresJournal of the Electrochemical Society, 1989
- Analysis of strained-layer superlattice effects on dislocation density reduction in GaAs on Si substratesApplied Physics Letters, 1989
- Growth and properties of InAsP alloys prepared by organometallic vapor phase epitaxyJournal of Crystal Growth, 1988
- Vapor-solid distribution relation in MOCVD GaAsxP1−x and InAsxP1−xJournal of Crystal Growth, 1985
- Composition effects in the growth of Ga(In)AsyP1-y alloys by MBEJournal of Crystal Growth, 1980