Low threading dislocation density GaAs on Si(100) with InGaAs/GaAs strained-layer superlattice grown by migration-enhanced epitaxy
- 1 June 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (6) , 641-645
- https://doi.org/10.1007/bf02655433
Abstract
No abstract availableKeywords
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