Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
- 1 December 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (12A) , L1950
- https://doi.org/10.1143/jjap.26.l1950
Abstract
The etch-pit density of epitaxial GaAs layers grown on Si was significantly reduced by using the technique of growth interrupt and thermal cycles (in situ TC) followed by growth of In0.1Ga0.9As/GaAs strained-layer superlattices (SLS's). The etch-pit density of 1.4×106 cm-2 (density of small pits by molten KOH etching) was achieved in 3.5 µm-thick GaAs epilayers. It was also found that the effect of SLS's on dislocation reduction was more enhanced by combining with the in situ TC process than the effect when SLS's were used by themselves.Keywords
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