Differential I/V of heterostructure correlates with laser threshold
- 1 August 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (3) , 90-93
- https://doi.org/10.1063/1.1654303
Abstract
We report detailed measurements of current (I) vs voltage (V) on double heterojunctions (AlxGa1−xAs–GaAs–AlyGa1−yAs) at very high injection levels which reveal nearly discontinuous ∂2V/∂I2 at currents ∼ 30% below lasing threshold. This behavior persists unchanged after the laser mirrors are destroyed. A similar breakpoint in ∂2V/∂I2 is found on nonlasing double heterostructures and correlates with the onset of intense infrared emission.Keywords
This publication has 5 references indexed in Scilit:
- Highly Uniform Alx Ga1−x As Double-Heterostructure Lasers and Their Characteristics at Room TemperatureApplied Physics Letters, 1971
- GaAs–AlxGa1−xAs Double Heterostructure Injection LasersJournal of Applied Physics, 1971
- STRIPE-GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS: MODE STRUCTURE AND cw OPERATION ABOVE ROOM TEMPERATUREApplied Physics Letters, 1971
- Preparation and Investigation of Epitaxial Layers of AlxGa1‐xAs solid Solutions and of Heterojunctions in the AlAs‐GaAs systemCrystal Research and Technology, 1969
- Super Radiant Narrowing in Fluorescence Radiation of Inverted PopulationsJournal of Applied Physics, 1963