Preparation and Investigation of Epitaxial Layers of AlxGa1‐xAs solid Solutions and of Heterojunctions in the AlAs‐GaAs system
- 1 January 1969
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 4 (4) , 495-503
- https://doi.org/10.1002/crat.19690040406
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Injection Electroluminescence in (AlxGa1−x)As Diodes of Graded Energy GapJournal of Applied Physics, 1966
- Preparation and Properties of AlAs-GaAs Mixed CrystalsJournal of the Electrochemical Society, 1966
- Zone MeltingJournal of the Electrochemical Society, 1958