Ion implantation in InAs and InSb

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Abstract
Ion implantation in InAs and InSb with sulfur and zinc ions has been used to fabricate p-n junction diodes which have been characterized for their infrared detector properties. Planar mosaic infrared detectors have been produced in both materials with good characteristics. Blackbody detectivities (D∗BB) of 2 × 109 cm Hz1/3/ watt and 4 per cent uniformity have been measured for InAs. Similarly, InSb has shown D∗BB values of 1.3 × 1010 cm Hz1/2/watt and 49 per cent uniformity between elements in an array. Experimental range-energy data for zinc in InSb has been obtained between 0.2 and 1.8 MeV and compared with predicted values from the LSS theory. Theory predicts a deeper range than experimental values indicate; however, the differences are sufficiently small to make the curves useful for device design. The slopes of the curves indicate that a large component of nuclear stopping predominates in this energy region.

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