A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing in O2 or N2O by Zero-Bias Thermally Stimulated Current Spectroscopy
- 1 May 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (5R) , 2599
- https://doi.org/10.1143/jjap.35.2599
Abstract
The concentration of shallow defect states in Ta2O5 films was found to be greatly reduced, resulting in much less leakage current in Al/Ta2O5/Si capacitors, if N2O was used instead of O2 for post-deposition annealing. The superiority of N2O is explained by the formation of a slightly thicker SiO x diffusion barrier, which can reduce Si contamination coming from the Si substrate into the Ta2O5 film.Keywords
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