Growth kinetics of oxides during furnace oxidation of Si in N2O ambient

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Abstract
During oxidation of silicon in N2O ambient, the individual products of dissociation of N2O play important roles in the oxidation/nitridation process. In this paper the roles of the individual products of dissociation of N2O are discussed and the reaction mechanisms involving the oxidants and silicon are proposed. It is proposed that oxygen and nitric oxide, the two main dissociation products, participate in the oxidation and nitridation processes, respectively. In this paper, a one‐dimensional steady‐state model is presented for the growth of a silicon–oxynitride layer from N2O which utilizes the role of individual by‐products of dissociation by accounting for the parallel reactions of silicon with oxygen (O2) and nitric oxide (NO). Using the model and the experimental data, values of diffusivities and reaction rates of O2 and NO through the oxynitride have been determined. The model has also been used to predict the functional form of the distribution of nitrogen in the dielectric for the first time.